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| Soft Switching Series IHW30N100R q C Reverse Conducting IGBT with monolithic body diode Features: * 1.5V Forward voltage of monolithic body Diode * Full Current Rating of monolithic body Diode * Specified for TJmax = 175C * Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) * Low EMI 1 * Qualified according to JEDEC for target applications * Pb-free lead plating; RoHS compliant Applications: * Microwave Oven * Soft Switching Applications Type IHW30N100R VCE 1000V IC 30A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking H30R100 Package PG-TO-247-3-21 G E PG-TO-247-3-21 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpul s VGE ICpul s IF 60 30 90 20 25 412 -40...+175 -55...+175 260 W C C V Symbol VCE IC 60 30 90 90 Value 1000 Unit V A 1 J-STD-020 and JESD-022 1 Rev. 2 July 06 Power Semiconductors Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 30 A T j =2 5 C T j =1 5 0 C T j =1 7 5 C Diode forward voltage VF V G E = 0V , I F = 3 0 A T j =2 5 C T j =1 5 0 C T j =1 7 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 70 0 A , V C E = V G E V C E = 10 0 0V, V G E = 0V T j =2 5 C T j =1 7 5 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 80 0 V, I C =3 0 A V G E = 15 V IGES gfs V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 30 A Symbol Conditions RthJA RthJCD RthJC Symbol Conditions IHW30N100R q Max. Value 0.36 0.36 40 Unit K/W Value min. 1000 5.1 Typ. 1.5 1.7 1.75 1.5 1.65 1.7 5.8 max. 1.7 1.7 6.4 Unit V A 56 5 2500 600 nA S - 2791 82 78 209 13 - pF nC nH Power Semiconductors 2 Rev. 2 July 06 Soft Switching Series IHW30N100R q Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 60 0 V, I C = 3 0 A, V G E = 0/ 15 V , R G = 26 , 846 33.3 2.1 mJ Symbol Conditions Value min. Typ. max. Unit Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(off) tf Eon Eoff Ets T j =1 7 5 C V C C = 60 0 V, I C = 30 A , V G E = 0/ 15 V , R G = 2 6 948 40.4 2.86 mJ Symbol Conditions Value min. Typ. max. Unit Power Semiconductors 3 Rev. 2 July 06 Soft Switching Series IHW30N100R q tp=1s 90A 80A 20s IC, COLLECTOR CURRENT 70A 60A 50A 40A 30A 20A 10A 0A 100Hz IC, COLLECTOR CURRENT TC=80C TC=110C 10A 50s 100s 500s Ic 1A DC 10ms 1kHz 10kHz 100kHz 0.1A 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for triangular current (Eon = 0, hard turn-off) (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 26) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V) 400W 350W 50A IC, COLLECTOR CURRENT 50C 75C 100C 125C 150C Ptot, POWER DISSIPATION 300W 250W 200W 150W 100W 50W 0W 25C 40A 30A 20A 10A 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C) Power Semiconductors 4 Rev. 2 July 06 Soft Switching Series IHW30N100R q 80A VGE=20V 80A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 15V 60A 13V 11V 40A 9V 7V VGE=20V 60A 15V 13V 40A 11V 9V 7V 20A 20A 0A 0V 1V 2V 3V 0A 0V 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C) 80A VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 2.5V IC=60A IC, COLLECTOR CURRENT 60A 2.0V IC=30A 1.5V IC=15A 40A 1.0V 20A T J=175C 25C 0.5V 0A 0V 2V 4V 6V 8V 10V 0.0V -50C 0C 50C 100C 150C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 5 Rev. 2 July 06 Soft Switching Series IHW30N100R q td(off) 1000ns td(off) 1000ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns tf 100ns tf 10ns 0A 10A 20A 30A 40A 50A 20 30 40 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 600V, VGE = 0/15V, RG=26, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 600V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 1000ns td(off) 6V max. 5V typ. 4V t, SWITCHING TIMES min. 100ns 3V tf 25C 50C 75C 100C 125C 150C 2V -50C 0C 50C 100C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 600V, VGE = 0/15V, IC = 30A, RG=26, Dynamic test circuit in Figure E) TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA) Power Semiconductors 6 Rev. 2 July 06 Soft Switching Series IHW30N100R q 5.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 3.0mJ Eoff 4.0mJ Eoff 3.0mJ 2.0mJ 2.0mJ 1.0mJ 1.0mJ 0.0mJ 0.0mJ 0A 10A 20A 30A 40A 50A 20 30 40 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 600V, VGE = 0/15V, RG=26, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 600V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) 2.5mJ 3.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES Eoff 2.5mJ 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 400V 2.0mJ Eoff 1.5mJ 1.0mJ 0.5mJ 0.0mJ 25C 50C 75C 100C 125C 150C 500V 600V 700V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 600V, VGE = 0/15V, IC = 30A, RG = 26, Dynamic test circuit in Figure E) VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 30A, RG = 26, Dynamic test circuit in Figure E) Power Semiconductors 7 Rev. 2 July 06 Soft Switching Series IHW30N100R q Ciss 15V VGE, GATE-EMITTER VOLTAGE 1nF 10V 800V c, CAPACITANCE 200V 100pF Coss 5V Crss 0V 0nC 50nC 100nC 150nC 200nC 250nC 10pF 0V 10V 20V 30V 40V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) D=0.5 D=0.5 ZthJC, TRANSIENT THERMAL RESISTANCE 10 K/W -1 ZthJC, TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.05 R,(K/W) 0.1586 0.0987 0.0807 0.026 10 K/W -1 0.2 0.1 0.05 R,(K/W) 0.1586 0.0987 0.0807 0.026 , (s) 7.03*10-2 6.76*10-3 6.53*10-4 8.22*10-5 R2 , (s) 7.03*10-2 6.76*10-3 6.53*10-4 8.22*10-5 R2 0.02 R 1 10 K/W -2 0.02 R 1 10 K/W -2 0.01 C 1 = 1 /R 1 C 2 = 2 /R 2 0.01 C 1 = 1 /R 1 C 2 = 2 /R 2 single pulse 1s 10s 100s 1ms 10ms 100ms single pulse 1s 10s 100s 1ms 10ms 100ms tP, PULSE WIDTH Figure 19. IGBT transient thermal resistance (D = tp / T) tP, PULSE WIDTH Figure 20. Diode transient thermal impedance as a function of pulse width (D=tP/T) Power Semiconductors 8 Rev. 2 July 06 Soft Switching Series IHW30N100R q IF=60A 2.0V 20A TJ=25C 175C 10A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 1.5V 30A 15A 1.0V 0.5V 0A 0.0V 0.5V 1.0V 1.5V 0.0V -50C 0C 50C 100C 150C VF, FORWARD VOLTAGE Figure 21. Typical diode forward current as a function of forward voltage TJ, JUNCTION TEMPERATURE Figure 22. Typical diode forward voltage as a function of junction temperature Power Semiconductors 9 Rev. 2 July 06 Soft Switching Series IHW30N100R q PG-TO247-3-21 Power Semiconductors 10 Rev. 2 July 06 Soft Switching Series i,v IHW30N100R q diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR Ir r m QF dir r /dt 90% Ir r m Figure C. Definition of diodes switching characteristics 1 Tj (t) p(t) r1 r2 2 n rn r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Figure B. Definition of switching losses Power Semiconductors 11 Rev. 2 July 06 Soft Switching Series IHW30N100R q Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 7/24/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2 July 06 |
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